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TN8 数据表(PDF) 1 Page - STMicroelectronics

部件名 TN8
功能描述  8A SCRs
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TN8 数据表(HTML) 1 Page - STMicroelectronics

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®
TN8, TS8 and TYNx08 Series
SENSITIVE & STANDARD
8A SCRs
April 2002 - Ed: 4A
MAIN FEATURES:
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive
discharge
ignition
and
voltage
regulation circuits...
Available
in
through-hole
or
surface-mount
packages, they provide an optimized performance
in a limited space area.
Symbol
Value
Unit
IT(RMS)
8A
VDRM/VRRM
600 to 1000
V
IGT
0.2 to 15
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tc = 110°C
8
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 110°C
5
A
TS8/TN8
TYN
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
73
100
A
tp = 10 ms
70
95
I
²tI²t Value for fusing
tp = 10 ms
Tj = 25°C
24.5
45
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage (for TN8 & TYN only)
5
V
A
K
G
A
G
A
K
DPAK
(TS8-B)
(TN8-B)
A
A
K
G
IPAK
(TS8-H)
(TN8-H)
A
A
K
G
G
A
A
K
TO-220AB
(TS8-T)
TO-220AB
(TYNx)


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