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TPDV640 数据表(PDF) 2 Page - STMicroelectronics

部件名 TPDV640
功能描述  ALTERNISTORS
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TPDV640 数据表(HTML) 2 Page - STMicroelectronics

  TPDV640 Datasheet HTML 1Page - STMicroelectronics TPDV640 Datasheet HTML 2Page - STMicroelectronics TPDV640 Datasheet HTML 3Page - STMicroelectronics TPDV640 Datasheet HTML 4Page - STMicroelectronics TPDV640 Datasheet HTML 5Page - STMicroelectronics  
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GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Contact to ambient
50
°C/W
Rth (j-c) DC Junction to case for DC
1.2
°C/W
Rth (j-c) AC Junction to case for 360
° conduction angle ( F= 50 Hz)
0.9
°C/W
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III
MAX
200
mA
VGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj=125
°C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
Tj=25
°C
I-II-III
TYP
2.5
µs
IL
IG=1.2 IGT
Tj=25
°C
I-III
TYP
100
mA
II
200
IH *IT= 500mA gate open
Tj=25
°C
TYP
50
mA
VTM *ITM= 60A tp= 380µs
Tj=25
°C
MAX
1.8
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
°C
MAX
0.02
mA
Tj=125
°C
MAX
8
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=125
°C
MIN
500
V/
µs
(dI/dt)c *
(dV/dt)c = 200V/
µs
Tj=125
°C
MIN
35
A/ms
(dV/dt)c = 10V/
µs
142
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) =1W
PGM = 40W (tp = 20 µs)
IGM =8A (tp =20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TPDV 640 ---> 1240
2/5



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