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TPN3021 数据表(PDF) 2 Page - STMicroelectronics |
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TPN3021 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() Symbol Parameter VRM Stand-off voltage VBO Breakover voltage VBR Breakdown voltage IH Holding current IBO Breakover current IRM Leakage current at VRM IPP Peak pulse current C Capacitance αT Temperature coefficient ELECTRICAL CHARACTERISTICS (Tamb=25 °C) V I V RM BO V RM I H IBO PP I I FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO-NO GO TEST Type IRM @VRM max. note 1 VBO @IBO max. IH min. note 2 C typ. max. note 3 αT typ. note 4 µAV V mA mA pF pF 10 -4/ °C TPN3021 4 28 38 100 30 25 30 8 Note 1 : Between any I/O pin and Ground or between I/O1 and I/O2. Note 2 : See the functional holding current (IH) test circuit. Note 3 : Between any I/O pin and GND or between I/O1 and I/O2 at 0V bias, VRMS = 30 mV, F = 1 MHz. Note 4 : ∆VBO = αTx (Tamb - 25) x VBO(25°C). R -V P V BAT 48 V = Surge generator - D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within a duration of 50 ms max. ® TPN3021 2/4 |
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