-40

-20

0

20

40

60

80

100 120 140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I

,I [Tj]/I

,I [Tj=25°C]

GT H

GT H

Tj(°C)

Fig 5: Relative variation of gate trigger current and

holding current versus junction temperature.

1E+1

1E+2

1E+3

1E+4

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I [R

] / I [R

=1k ]

HGK

H

GK

Ω

Tj=25°C

R

( )

GK

Ω

Fig 6: Relative variation of holding current versus

gate-cathode resistance (typical values).

1

10

100

1000

0

10

20

30

40

50

60

70

80

90

100

110

120

IA)

TSM(

Tj initial=25°C

F=50Hz

Number of cycles

Fig 7: Non repetitive surge peak on-state current

versus number of cycles.

12

5

10

10

100

500

I

(A),I²t(A²s)

TSM

Tj initial=25°C

I²t

tp(ms)

Fig 8: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and cor-

responding value of I

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.1

1.0

10.0

100.0

I

(A)

TM

Tj max.:

Vto=0.85V

Rt=31m

Ω

Tj=Tj max.

Tj=25°C

V

(V)

TM

Fig 9: On-state characteristics (maximum values).

0

2

4

6

8

101214161820

0

20

40

60

80

100

Rth(j-a) (°C/W)

S(Cu) (cm²)

Fig 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35

µm).

TS1220-600B

4/5