TS420 Series

4/8

Fig. 4: Relative variation of gate trigger current

and holding current versus junction temperature.

Fig. 5: Relative variation of holding current

versus gate-cathode resistance (typical values).

Fig. 6: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

Fig. 7: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

Fig. 8: Surge peak on-state current versus

number of cycles.

Fig. 9:

Non-repetitive surge

peak on-state

current

for

a

sinusoidal

pulse

with

width

tp < 10 ms, and corresponding values of I²t.

-40

-20

0

20

40

60

80

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]

IGT

IH & IL

Rgk = 1k

Ω

Tj(°C)

IH[Rgk] / IH[Rgk = 1k ]

Ω

Rgk(k

Ω)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.01

0.10

1.00

10.00

Tj=125°C

VD=0.67xVDRM

dV/dt[Rgk] / dV/dt [Rgk = 220 ]

Ω

Rgk(

Ω)

0

2

4

6

8

10

12

14

16

18

20

22

0

2

4

6

8

10

VD = 0.67 x VDRM

Tj = 125 °C

Rgk = 220

Ω

dV/dt[Cgk] / dV/dt [Rgk = 220

Ω]

Cgk(nF)

1

10

100

1000

0

5

10

15

20

25

30

35

ITSM(A)

Non repetitiv e

Tj initial = 25 °C

Repetitive

Tcase = 115 °C

Number of cycles

One cycle

tp = 10ms

0.01

0.10

1.00

10.00

1

10

100

300

Tj initial = 25 °C

ITSM

dI/dt

limitattion

tp(ms)