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TS419-8 数据表(PDF) 28 Page - STMicroelectronics |
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TS419-8 数据表(HTML) 28 Page - STMicroelectronics |
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28 / 32 page ![]() TS419-TS421 28/32 The efficiency is the ratio between the output power and the power supply The maximum theoretical value is reached when Vpeak = Vcc, so s Decoupling of the circuit Two capacitors are needed to bypass properly the TS419/TS421. A power supply bypass capacitor CS and a bias voltage bypass capacitor CB. CS has particular influence on the THD+N in the high frequency region (above 7kHz) and an indirect influence on power supply disturbances. With 1µF, you can expect similar THD+N performances to those shown in the datasheet. In the high frequency region, if CS is lower than 1µF, it increases THD+N and disturbances on the power supply rail are less filtered. On the other hand, if CS is higher than 1µF, those disturbances on the power supply rail are more filtered. CB has an influence on THD+N at lower frequencies, but its function is critical to the final result of PSRR (with input grounded and in the lower frequency region). If CB is lower than 1µF, THD+N increases at lower frequencies and PSRR worsens. If CB is higher than 1µF, the benefit on THD+N at lower frequencies is small, but the benefit to PSRR is substantial. Note that CIN has a non-negligible effect on PSRR at lower frequencies. The lower the value of CIN, the higher the PSRR. s Wake-up Time: T WU When standby is released to put the device ON, the bypass capacitor CB will not be charged immediatly. As CB is directly linked to the bias of the amplifier, the bias will not work properly until the CB voltage is correct. The time to reach this voltage is called wake-up time or TWU and typically equal to: TWU=0.15xCB (s) with CB in µF. Due to process tolerances, the range of the wake-up time is : 0.12xCb < TWU < 0.18xCB (s) with CB in µF Note : When the standby command is set, the time to put the device in shutdown mode is a few microseconds. s Pop performance Pop performance is intimately linked with the size of the input capacitor Cin and the bias voltage bypass capacitor CB. The size of CIN is dependent on the lower cut-off frequency and PSRR values requested. The size of CB is dependent on THD+N and PSRR values requested at lower frequencies. Moreover, CB determines the speed with which the amplifier turns ON. The slower the speed is, the softer the turn ON noise is. The charge time of CB is directly proportional to the internal generator resistance 150k Ω.. Then, the charge time constant for CB is τ B = 150kΩxCB (s) As CB is directly connected to the non-inverting input (pin 2 & 3) and if we want to minimize, in amplitude and duration, the output spike on Vout1 (pin 5), CIN must be charged faster than CB. The equivalent charge time constant of CIN is: τ IN = (Rin+Rfeed)xCIN (s) Thus we have the relation: τ IN < τB (s) Proper respect of this relation allows to minimize the pop noise. Remark : Minimizing CIN and CB benefits both the pop phenomena, and the cost and size of the application. s Application : Differential inputs BTL power amplifier. The schematic on figure 98, shows how to design the TS419/21 to work in a differential input mode. The gain of the amplifier is: In order to reach optimal performances of the differential function, R1 and R2 should be matched at 1% max. Vcc 4 V ply sup P P PEAK OUT π = = η % 5 . 78 4 = π 1 2 VDIFF R R 2 G = |
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