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MPC8313VRGDF 数据表(PDF) 14 Page - Freescale Semiconductor, Inc |
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MPC8313VRGDF 数据表(HTML) 14 Page - Freescale Semiconductor, Inc |
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14 / 100 page ![]() MPC8313E PowerQUICC™ II Pro Processor Hardware Specifications, Rev. 2.1 14 Freescale Semiconductor DDR and DDR2 SDRAM Table 11 provides the PLL lock times. 6 DDR and DDR2 SDRAM This section describes the DC and AC electrical specifications for the DDR SDRAM interface. Note that DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V. 6.1 DDR and DDR2 SDRAM DC Electrical Characteristics Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) when GVDD(typ) = 1.8 V. Time for the device to turn on POR configuration signal drivers with respect to the negation of HRESET 1— tPCI_SYNC_IN 1, 3 Notes: 1. tPCI_SYNC_IN is the clock period of the input clock applied to PCI_SYNC_IN. When the device is In PCI host mode the primary clock is applied to the SYS_CLK_IN input, and PCI_SYNC_IN period depends on the value of CFG_CLKIN_DIV. 2. tSYS_CLK_IN is the clock period of the input clock applied to SYS_CLK_IN. It is only valid when the device is in PCI host mode. 3. POR configuration signals consists of CFG_RESET_SOURCE[0:2] and CFG_CLKIN_DIV. Table 11. PLL Lock Times Parameter/Condition Min Max Unit Notes PLL lock times — 100 μs— Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V Parameter/Condition Symbol Min Max Unit Notes I/O supply voltage GVDD 1.7 1.9 V 1 I/O reference voltage MVREF 0.49 × GVDD 0.51 × GVDD V2 I/O termination voltage VTT MVREF –0.04 MVREF + 0.04 V 3 Input high voltage VIH MVREF +0.125 GVDD +0.3 V — Input low voltage VIL –0.3 MVREF – 0.125 V — Output leakage current IOZ –9.9 9.9 μA4 Output high current (VOUT = 1.420 V) IOH –13.4 — mA — Output low current (VOUT = 0.280 V) IOL 13.4 — mA — Notes: 1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times. 2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise on MVREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF. This rail should track variations in the DC level of MVREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ GVDD. Table 10. RESET Initialization Timing Specifications (continued) Parameter/Condition Min Max Unit Notes |
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