TSH511C datasheet(8/18 Pages) STMICROELECTRONICS

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TSH511

8/18

Amplifier (AMP) Section

GAMP

Amplifier Voltage Gain

ZL=2 k

Ω, f

carrier=10 MHz

ZAMP_IN

Input impedance defined as

RAMP_IN in parallel with CAMP_IN

RAMP_IN

CAMP_IN

Ω

ZAMP_OUT Output impedance

350

Ω

P1dBAMP

1dB compression point

ZL = 2 k

Ω

ZL = 2 k

Ω,

fcarrier=10 MHz

220

560

380

mVRMS

BWAMP

-3dB AMP Bandwidth

ZL = 2 k

Ω

MHz

Limitor (LIM) Section

GLIM

Voltage gain

ZL=15k

Ω tied to GND

ZLIM_IN

Input impedance defined as

RLIM_IN in parallel with CLIM_IN

RLIM_IN

CLIM_IN

Ω

VLIM_OUT Output Voltage

ZL = 15 k

Ω tied to GND

170

mVpp

FM Demodulator Section

VDEM

Output voltage

+-75 kHz FM deviation

typical application schematic

ZL = 4 k

Ω

700

800

900

mVRMS

ZDEM_OUT Output impedance

100

Ω

Squelch Section

ATT

Audio attenuation on each receiver

when audio buffers are muted.

RX1 and RX2 audio buff-

ers muted

ZL = 16

Ω on both audio

buffers

ZN_IN

Noise Amplifier Input impedance

Ω

VN_TH

Comparator threshold

from MUTED to

UNMUTED state,

RMUTE = 22 kΩ,

fIN = 100 kHz

mVRMS

VN_HYS

Comparator hysteresis

RMUTE = 22 kΩ,

fIN = 100 kHz

mVRMS

IMUTE_SINK

Current sinked on pin 25 to discharge

CMUTE capacitor: ramp generator con-

trolling the attenuation from ON to OFF

states of audio buffers.

Voltage on pin 25 = 1.7V

µA

IMUTE_SOU

RCE

Current sourced on pin 25 to charge

CMUTE capacitor: ramp generator con-

trolling the attenuation from OFF to ON

states of audio buffers.

Voltage on pin 25 = 1.7V

µA

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

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