2PD601AXL_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 6 November 2008

3 of 9

NXP Semiconductors

2PD601ARL; 2PD601ASL

50 V, 100 mA NPN general-purpose transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

6

V

collector current

-

100

mA

peak collector current

single pulse;

-

200

mA

peak base current

single pulse;

-

100

mA

total power dissipation

[1] -

250

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction

to ambient

in free air

[1] -

-

500

K/W

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

--10

nA

--5

µA

emitter-base cut-off current

--10

nA

DC current gain

[1] 90

-

-

210

-

340

290

-

460