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TYN610 数据表(PDF) 3 Page - STMicroelectronics |
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TYN610 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 4 page ![]() TYN210 ---> TYN1010 3/4 0 10 2030 4050607080 90 100 110 120 130 0 2 4 6 8 10 12 I (A) T(AV) = 180 o DC Tcase ( C) o Fig. 3: Average on-state current versus case tem- perature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E +2 5E+2 0.01 0.1 1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 4: Relative variation of thermal impedance versus pulse duration. Fig. 5: Relative variation of gate trigger current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and cor- responding value of I 2t. Fig. 8: On-state characteristics (maximum values). |
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