TYP 212 --->TYP 2012

April 1995

SCR FOR OVERVOLTAGE PROTECTION

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

(180

° conduction angle, single phase circuit)

Tc = 110

°C12

A

IT(AV)

Average on-state current

(180

° conduction angle, single phase circuit)

Tc = 110

°C8

A

ITSM

Non repetitive surge peak on-state current

( Tj initial = 25

°C)

tp = 8.3 ms

315

A

tp = 10 ms

300

I2tI2t value

tp = 10 ms

450

A2s

ITM

Non repetitive surge peak on-state current

( Tj initial = 25

°C)

Exponential pulse wave form

tp = 1 ms

750

A

dI/dt

Critical rate of rise of on-state current

Gate supply : IG = 100 mA diG/dt = 1 A/µs

100

A/

µs

Tstg

Tj

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

°C

Tl

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

TO220AB

(Plastic)

K

A

G

.

HIGH SURGE CURRENT CAPABILITY

.

HIGH dI/dt RATING

.

HIGH STABILITY AND RELIABILITY

DESCRIPTION

Symbol

Parameter

TYP

Unit

212

512

1012

2012

VDRM

VRRM

Repetitive peak off-state voltage

Tj = 125

°C

25

50

100

200

V

ABSOLUTE RATINGS (limiting values)

FEATURES

The TYP 212 ---> 1012 Family uses high perform-

ance glass passivated chips technology.

These Silicon Controlled Rectifiers are designed for

overvoltage protection in crowbar circuits applica-

tion.

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