2

PA51U

PA51 • PA51A

P r o d u c t I n n o v a t i o n F r o m

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

SPECIFICATIONS

ABSOLUTEMAXIMUMRATINGS

PA51

PA51A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

T

±5

±10

±2

±8

mV

OFFSET VOLTAGE, vs. temperature

Full temperature range

±10

±65

*

±40

µV/°C

OFFSET VOLTAGE, vs. supply

T

±35

*

µV/V

OFFSET VOLTAGE, vs. power

T

±20

*

µV/W

BIAS CURRENT, initial

T

±15

±40

*

±30

nA

BIAS CURRENT, vs. temperature

Full temperature range

±.05

*

nA/°C

BIAS CURRENT, vs. supply

T

±.02

*

nA/V

OFFSET CURRENT, initial

T

±12

±30

±5

±10

nA

OFFSET CURRENT, vs. temperature

Full temperature range

±.05

*

nA/°C

INPUT IMPEDANCE, common mode

T

250

*

MΩ

INPUT IMPEDANCE, differential

T

10

*

MΩ

INPUT CAPACITANCE

T

3

*

pF

Full temperature range

±V

±V

*

*

V

T

70

110

80

*

dB

GAIN

OPEN LOOP GAIN at 10Hz

Full temp. range, full load

94

115

*

*

dB

GAIN BANDWIDTH PRODUCT @ 1MHz T

1

*

MHz

POWER BANDWIDTH

T

10

16

*

*

kHz

PHASE MARGIN

Full temperature range

45

*

°

OUTPUT

T

±V

±V

*

*

V

Full temp. range, I

±V

±V

*

*

V

Full temp. range, I

±V

*

V

CURRENT

T

±10

*

A

SETTLING TIME to .1%

T

2

*

µs

SLEW RATE

T

1.0

2.6

*

*

V/µs

CAPACITIVE LOAD, unity gain

Full temperature range

1.5

*

nF

CAPACITIVE LOAD, gain > 4

Full temperature range

SOA

*

POWER SUPPLY

VOLTAGE

Full temperature range

±10

±28

±36

*

±34

±40

V

CURRENT, quiescent

T

2.6

10

*

*

mA

THERMAL

F > 60Hz

1.0

1.2

*

*

°C/W

RESISTANCE, DC, junction to case

F < 60Hz

1.5

1.8

*

*

°C/W

RESISTANCE, junction to air

30

*

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

+85

–55

+125

°C

SUPPLY VOLTAGE, +V

80V

OUTPUT CURRENT, within SOA

10A

POWER DISSIPATION, internal

97W

INPUT VOLTAGE, differential

±37V

INPUT VOLTAGE, common mode

±V

S

200°C

TEMPERATURE, pin solder -10s

300°C

TEMPERATURE RANGE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

NOTES: *

The specification of PA51A is identical to the specification for PA51 in applicable column to the left.

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF.

2. The power supply voltage specified under the TYP rating applies unless otherwise noted as a test condition.

3. +V

4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

5. Full temperature range specifications are guaranteed but not 100% tested.