USBDFxxW5

6/9

Fig. A6: Remaining voltage at both stages S1 (Vinput) and S2 (Voutput) during ESD surge.

Please note that the USBDFxxW5 is not only acting for positive ESD surges but also for negative ones. For

these kinds of disturbances it clamps close to ground voltage as shown in Fig. A6b.

The early ageing and destruction of IC’s is often due to latch-up phenomena which is mainly induced by

dV/dt. Thanks to its structure, the USBDFxxW5 provides a high immunity to latch-up phenomena by

smoothing very fast edges.

LATCH-UP PHENOMENA

a. Positive surge

b.Negative surge

CROSSTALK BEHAVIOR

Line 1

Line 2

DRIVERS

RECEIVERS

αβ

1G1

12G2

V+

V

αβ

2G2

21G1

V+

V

Fig. A7: Crosstalk phenomena

The crosstalk phenomena is due to the coupling between 2 lines. The coupling factor (

when the gap across lines decreases, this is the reason why we provide crosstalk measurements for

monolithic device to guarantee negligeable crosstalk between the lines. In the example above the ex-

nomenon has to be taken into account when the drivers impose fast digital data or high frequency analog

signals in the disturbing line. The perturbed line will be more affected if it works with low voltage signal or

high load impedance (few k

Ω).