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USB6B1RL 数据表(PDF) 6 Page - STMicroelectronics |
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USB6B1RL 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 9 page ![]() USB6Bx 6/9 Symbol Parameter Value Unit min. typ. max. VBR Breakdown voltage between Vbus and GND IR=1mA 6 V IRM Leakage current VRM=5.25V 10 µA C Capacitance between pins D+ and D- VOSC =30mV, F=1MHz, VR=0V VCC not connected 15 pF Capacitance between pins D+ (or D-) and GND VOSC =30mV, F=1MHz, VR=5V VCC=5V 25 pF ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter Value Unit VPP Peak pulse voltage IEC1000-4-2 contact discharge IEC1000-4-2 air discharge MIL STD883C-Method 3015-6 8 15 4 kV PPP Peak pulse power 8/20 µs 500 W IPP Peak pulse current 8/20 µs25 A Tstg Tj Storage temperature range Maximum junction temperature -55to+150 + 150 °C °C TL Lead solder temperature (10s duration) 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) |
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