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VB027ASP 数据表(PDF) 3 Page - STMicroelectronics |
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VB027ASP 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() ELECTRICAL CHARACTERISTICS (Vb = 13.5 V; Vd = 5 V; Tj =25 oC; Rcoil = 510 m Ω; Lcoil = 7 mH; unless otherwise specified) Symb ol Parameter T est Co ndi ti ons Min . Typ . Max. Uni t Vcl High Voltage Clamp -40 oC ≤ Tj ≤ 125 oCIcoil =7 A 300 400 V Vcl High Voltage Clamp Icoil = 7 A 325 345 365 V Vce(sat) Saturation Voltage of The Power Stage Ic =7A; Vin =4V -40 oC ≤ Tj ≤ 125 oC 3V Vce(sat) Saturation Voltage of The Power Stage Ic =6 A; Vin =4V -40 oC ≤ Tj ≤ 125 oC 2V Id(std by) St and-by Supply Current Vin =0.4 11 mA Id(ugnd ) St and-by Supply Current During Underground Vin =0.4 V Ic =-4.5A -40 oC ≤ Tj ≤ 125 oC 160 mA Id(on) Power On Supply Current Vin =4 V Ic =6 A -40 oC ≤ Tj ≤ 125 oC 130 mA Id(on) Power On Supply Current Vin =4 V Ic =7 A -40 oC ≤ Tj ≤ 125 oC 160 mA Vd Driver St age Supply Voltage 4.5 5.5 V Icl Coil Current Limit Vin =4 V 8.5 10 A Icl(td) Coil Current Limit Drift With Temperat ure See figure 3 Ile ak Collector Leakage Current VC = 125V 100 µA Vin H High Level Input Voltage 4 5.5 V Vin L Low Level Input Voltage 0 0.8 V Iin H High Level Input Current 200 µA Vdia gH High Level Diagnostic Output Voltage REXT =15 K Ω CEXT=1nF (see fig. 1) 3.5 Vd V VdiagL Low Level Diagnostic Output Voltage REXT =15 K Ω CEXT=1nF (see fig. 1) 0.5 V IdiagTH1 Diagnostic Current First Threshold 4.25 4.5 4.75 A IdiagTD1 Diagnostic Current First Threshold Drift With Temperature See figure 4 IdiagTH2 Diagnostic Current Second Threshold 5.45 5.8 6.15 A IdiagTD2 Diagnostic Current Second Threshold Drift With Temperat ure See figure 5 IdiagH Overt emperat ure Diagnostic Current 22.6 3.2A tdlc Delay Time Coil Current Ic =7 A 5 25 45 µs tflc Fall Time Coil Current Ic =7 A 2 8 15 µs Es/b Inductive Energy VCL =400 V Ic =7A L = 8mH 300 mJ Tin t Temperature of Diagnostic Shift 130 150 170 oC Thys Thermal Hysteresis 30 oC VF Forward Voltage of The Body Diode Ic = -10 A 1.2 2.2 3.2 V VB027ASP 3/8 |
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