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VB027BSP 数据表(PDF) 3 Page - STMicroelectronics

部件名 VB027BSP
功能描述  HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

VB027BSP 数据表(HTML) 3 Page - STMicroelectronics

  VB027BSP Datasheet HTML 1Page - STMicroelectronics VB027BSP Datasheet HTML 2Page - STMicroelectronics VB027BSP Datasheet HTML 3Page - STMicroelectronics VB027BSP Datasheet HTML 4Page - STMicroelectronics VB027BSP Datasheet HTML 5Page - STMicroelectronics VB027BSP Datasheet HTML 6Page - STMicroelectronics VB027BSP Datasheet HTML 7Page - STMicroelectronics  
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VB027BSP
ELECTRICAL CHARACTERISTICS (VCC=13.5V; Vd=5V; Tj=25ºC; Rcoil=510mΩ; Lcoil=7mH unless otherwise
specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Vcl
High voltage clamp
-40
°C≤T
j≤125°C; IC=6A
320
420
V
Vcg(sat)
Power stage saturation
voltage
IC=6A; VIN=4V; -40°C≤Tj≤125°C2
V
Id(off)
Power-off supply current
VIN=0.4V
11
mA
Id(on)
Power-on supply current
VIN=4V; IC=6A; -40°C≤Tj≤125°C
160
mA
Vd
Driving stage supply
voltage
4.5
5.5
V
Icl
Collector current limit
VIN=4V
8.5
10.5
A
Icl(td)
Collector current limit drift
with temperature
See figure 3
Ileak
Collector leakage current
Vc=125V
100
µA
VINH
High level input voltage
4
5.5
V
VINL
Low level input voltage
0
0.8
V
IINH
High level input current
200
µA
VdiagH
High level diagnostic
output voltage
REXT=15KΩ; CEXT=1nF (See figure 1)
3.5
Vd
V
VdiagL
Low level diagnostic
output voltage
REXT=22KΩ; CEXT=1nF (See figure 1)
0.5
V
IC(diag1)
First threshold level
collector current
4.25
4.5
4.75
A
IC(diag1)td
First threshold level
collector current drift with
temperature
See figure 4
IC(diag2)
Second threshold level
collector current
5.45
5.8
6.15
A
IC(diag2)td
Second threshold level
collector current drift with
temperature
See figure 5
IdiagH
Overtemperature
diagnostic current
22.6
3.2
A
td(off)
Turn-off delay time of
output current
IC=6A
5
25
45
µs
tf(off)
Turn-off fall time of output
current
IC=6A
2
8
15
µs
Es/b
Single pulse avalanche
energy
300
mJ
Tint
Temperature ofdiagnostic
shift
130
150
170
°C
Thys
Thermal hysteresis
30
°C
Vf
Diode forward voltage
IC= -10A
3
V
1



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