NTLJS1102P datasheet(3/7 Pages) ONSEMI

3 / 7 page

NTLJS1102P

http://onsemi.com

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn−On Delay Time

tD(ON)

VGS = −4.5 V, VDS = −4 V,

ID = −8.1 A, RG = 1 W

8.0

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −1.0 A

TJ = 25°C

−0.6

−1.0

TJ = 85°C

−0.58

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −1.0 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

ORDERING INFORMATION

Device

Package

Shipping†

NTLJS1102PTBG

WDFN6

(Pb−Free)

3000 / Tape & Reel

NTLJS1102PTAG

WDFN6

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTLJS1102P 数据表(PDF) 3 Page - ON Semiconductor

NTLJS1102P 数据表(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

数据表下载