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AT45DB021D 数据表(PDF) 28 Page - ATMEL Corporation |
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AT45DB021D 数据表(HTML) 28 Page - ATMEL Corporation |
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28 / 52 page ![]() 28 3638F–DFLASH–4/08 AT45DB021D cuted. Finally, during the internally self-timed portion of a Group D command, only the Status Register Read command should be executed. 15. Command Tables Table 15-1. Read Commands Command Opcode Main Memory Page Read D2H Continuous Array Read (Legacy Command) E8H Continuous Array Read (Low Frequency) 03H Continuous Array Read (High Frequency) 0BH Buffer Read (Low Frequency) D1H Buffer Read D4H Table 15-2. Program and Erase Commands Command Opcode Buffer Write 84H Buffer to Main Memory Page Program with Built-in Erase 83H Buffer to Main Memory Page Program without Built-in Erase 88H Page Erase 81H Block Erase 50H Sector Erase 7CH Chip Erase 7CH, 94H, 80H, 9AH Main Memory Page Program through Buffer 82H |
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