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VN02H 数据表(PDF) 4 Page - STMicroelectronics |
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VN02H 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VSTAT ( •) Status Voltage Output Low ISTAT =1.6 mA 0.4 V VUSD Under Voltage Shut Down 2. 5 5 V VSCL ( •) Status Clamp Voltage ISTAT =10 mA ISTAT =-10 mA 5. 5 6 -0. 7 -0.3 V V tSC Switch-off T ime in Short Circuit Condition at Start -Up RLOAD <10 m Ω VCC =13 V Tc =25 oC 1.5 5 ms IOV Over Current RLOAD <10 m Ω VCC =13 V 28 A IAV Average Current in Short Circuit RLOAD <10 m Ω VCC =13 V Tc =85 oC 0.9 1.8 A IOL Open Load Current Level 9< VCC <32 V 5 70 mA IOUT Leakage Current Of f St ate VOUT =0 V 60 µA TTSD Thermal Shut-down Temperat ure 140 160 oC TR Reset Temperature 125 145 oC (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. ( •) Status determination > 100 µs after the switching edge. Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH,VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02H 4/10 |
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