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VN02N 数据表(PDF) 4 Page - STMicroelectronics |
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VN02N 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VSCL ( •) Status Clamp Voltage ISTAT =10 mA ISTAT =-10 mA 6 -0. 7 V V tSC Switch-off Time in Short Circuit Condition at Start-Up RLOA D <10 m Ω Tc =25 oC 1.55ms IOV Over Current RLOA D <10 m Ω -40 ≤ Tc ≤ 125 oC28 A IAV Average Current in Short Circuit RLOAD <10 m Ω Tc =85 oC0.9 A IOL Open Load Current Level 570 mA TTSD Thermal Shut-down Temperature 140 oC TR Reset Temperature 125 oC (*) The VIH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor cal culated to not exceed 10 mA at the i nput pin. ( •) Status determination > 100 µs after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVER- SE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL,VIH thresholds and VSTAT are increased by VF with respect to power GND). – The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH,VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02N 4/11 |
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