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VNP10N06 数据表(PDF) 2 Page - STMicroelectronics

部件名 VNP10N06
功能描述  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

VNP10N06 数据表(HTML) 2 Page - STMicroelectronics

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ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Val ue
Unit
VDS
Drain-source Voltage (Vin = 0)
I nternally Clamped
V
Vin
Input Voltage
I nternally Clamped
V
Iin
Input Current
± 20
mA
ID
Drain Current
Internally Limit ed
A
IR
Reverse DC O utput Current
-15
A
Vesd
Electrostatic Discharge (C= 100 pF , R=1.5 K
Ω)
4000
V
Pto t
Total Dissipat ion at Tc =25
oC42
W
Tj
Operating Junction T emperature
Internally Limit ed
oC
Tc
Case Operating T emperature
Internally Limit ed
oC
Tst g
St orage Temperature
-55 to 150
oC
THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VCLAMP
Drain-source Clamp
Voltage
ID = 200 mA
Vin = 0
50
60
70
V
VIL
Input Low Level
Voltage
ID = 100
µAVDS =16 V
1.5
V
VIH
Input High Level
Voltage
RL =27
Ω
VDD =16 V
VDS =0.5 V
3. 2
V
VINCL
Input-Source Reverse
Clamp Volt age
Iin =-1 mA
Iin =1 mA
-1
8
-0.3
11
V
V
IDSS
Zero Input Voltage
Drain Current (Vin =0)
VDS =50 V
Vin =VIL
VDS <35 V
Vin =VIL
250
100
µA
µA
IISS
Supply Current from
Input Pin
VDS =0 V
Vin = 5 V
150
300
µA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
RDS(on)
St atic Drain-source On
Resistance
Vin =7 V
ID =1 A
TJ < 125
oC0.15
0.3
Ω
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
Coss
Output Capacit ance
VDS = 13V
f = 1MHz
Vin = 0
350
500
pF
VNP10N06
2/11



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