VNB20N07 datasheet(2/13 Pages) STMICROELECTRONICS

2 / 13 page

ABSOLUTE MAXIMUM RATING

Symbol

Parameter

Val ue

Unit

Po werSO-10

D2PAK

ISOW AT T220

VDS

Drain-source Voltage (Vin = 0)

I nternally Clamped

Vin

Input Voltage

Drain Current

Internally Limit ed

Reverse DC O utput Current

-28

Vesd

Electrostatic Discharge (C= 100 pF , R=1.5 K

Ω)

2000

Pto t

Total Dissipat ion at Tc =25

oC83

Operating Junction T emperature

Internally Limit ed

Case Operating T emperature

Internally Limit ed

Tst g

St orage Temperature

-55 to 150

THERMAL DATA

ISOW ATT 220

Pow erSO -10

D2PAK

Rthj-ca se

Rthj-a mb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.75

62. 5

1.5

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VCLAMP

Drain-source Clamp

Voltage

ID = 200 mA

Vin = 0

VCLTH

Drain-source Clamp

Threshold Voltage

ID =2 mA

Vin =0

VINCL

Input-Source Reverse

Clamp Volt age

Iin =-1 mA

-1

-0.3

IDSS

Zero Input Voltage

Drain Current (Vin =0)

VDS =13 V

Vin =0

VDS =25 V

Vin =0

200

µA

IISS

Supply Current from

Input Pin

VDS =0 V

Vin = 10 V

250

500

µA

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VIN(th)

Input Threshold

Voltage

VDS =Vin

ID +Iin =1 mA

0. 8

RDS(on)

St atic Drain-source On

Resistance

Vin =10 V

ID =10 A

Vin =5 V

ID =10 A

0.05

0.07

Ω

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS =13 V

ID =10 A

Coss

Output Capacit ance

VDS = 13V

f = 1MHz

Vin = 0

500

800

VNP20N07FI-VNB20N07-VNV20N07

2/13

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