© 2008 Semtech Corporation

SC802/SC802A

3

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specified in the Electrical Characteristics section is not recommended.

NOTES:

(1)

VCC1 and VCC2, and VOUT1 and VOUT2, must be connected, and will be referred to collectively as VCC and VOUT, respectively. All references

to V

VCC

, V

VOUT

, I

VCC

, and I

VOUT

refer to the common node voltage and total current of VCC1 and VCC2, and VOUT1 and VOUT2, respectively.

(2)

Tested according to JEDEC standard JESD22-A114-B.

(3)

Operating voltage is the input voltage at which the charger is guaranteed to begin operation. Maximum operating voltage is the maximum

Vsupply as defined in EIA/JEDEC Standard Number 78, paragraph 2.11.

(4)

Calculated from package in still air, mounted to 3 x 4.5(in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Absolute Maximum Ratings

VCC1, VCC2, EN_NTC (V) . . . . . . . . . . . . . . . . . . . -0.3 to +14.0

VOUT1, VOUT2, RTIME(V)

. . . . . . . . . . . . . . . . . -0.3 to +6.0

BIPB, CPB, CHRGB (V) . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0

IPRGM, ITERM, AFC (V) . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0

VPRGM, BSEN (V) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0

REFGND to GND (V) . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +0.3

Recommended Operating Conditions

Ambient Temperature Range (°C). . . . . . . . -40 < T

A

< +85

VCC1,2

< 6.5

Thermal Information

Maximum Junction Temperature (°C) . . . . . . . . . . . . . . +150

Storage Temperature Range (°C). . . . . . . . . . . . -65 to +150

Peak IR Reflow Temperature (10s to 40s) (°C) . . . . . . . +260

Test Conditions: V

VCC

VOUT

= 3.70V unless specified. Typ values at 25°C. Min and Max at -40°C < T

A

< 85°C, unless specified.

Parameter

Symbol

Conditions

Min

Typ

Max

Units

VCC UVLO Rising Threshold

VT

UVLOR

3.7

4.0

4.3

V

VCC UVLO Hysteresis

VT

UVLOH

40

mV

VCC OVP Rising Threshold

VT

OVPR

6.5

6.8

7.5

V

VCC OVP Falling Threshold

VT

OVPF

6.1

6.5

7.1

V

VCC OVP Hysteresis

VT

OVPH

VT

OVPR

- VT

OVPF

200

300

500

mV

Operating Current

ICC

DIS

V

EN_NTC

= 0V, CHRGB, CPB off

2.6

mA

ICC

CHG

V

EN_NTC

= 0.5 × V

VCC

, CHRGB, CPB off

1

2.4

3.5

ICC

LDO

LDO Mode, CHRGB, CPB off

816

23

Battery Leakage Current (sum of

I

VOUT

and I

BSEN

)

ILeak

BAT

V

VCC

= 0V, V

VOUT

= V

BSEN

= 4.5V

0.1

2

μA

Regulated Voltage

V

CV-HI

V

VPRGM

= V

VCC

4.16

4.20

4.24

V

V

CV_LO

V

VPRGM

= 0V

4.06

4.10

4.14

REFGND Output Accuracy

V

V

VOUT_RGND

= V

VOUT

- V

CVn

, V

REFGND

= 30mV

22

30

38

mV

REFGND Current

I

REFGND

V

REFGND

= 0V

35

μA

Electrical Characteristics