VNQ810M datasheet(1/21 Pages) STMICROELECTRONICS

部件名	VNQ810M

功能描述	QUAD CHANNEL HIGH SIDE DRIVER

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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M

®

July 2004

1/21

VNQ810M

QUAD CHANNEL HIGH SIDE DRIVER

s

CMOS COMPATIBLE INPUTS

s

OPEN DRAIN STATUS OUTPUTS

s

ON STATE OPEN LOAD DETECTION

s

OFF STATE OPEN LOAD DETECTION

s

SHORTED LOAD PROTECTION

s

UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

s

PROTECTION AGAINST LOSS OF GROUND

s

VERY LOW STAND-BY CURRENT

s

REVERSE BATTERY PROTECTION (**)

DESCRIPTION

The VNQ810M is a quad HSD formed by

assembling two VND810M chips in the same SO-

28 package. The VND810M is a monolithic device

made by using STMicroelectronics VIPower M0-3

Technology, intended for driving any kind of load

with one side connected to ground.

Active VCC pin voltage clamp protects the device

against low energy spikes (see ISO7637 transient

compatibility

table).

Active

current

limitation

combined with thermal shutdown and automatic

restart protects the device against overload. The

current limitation threshold is aimed at detecting

the 21W/12V standard bulb as an overload fault.

The device detects open load condition both in on

and off state . Output shorted to VCC is detected

in the off state. Device automatically turns off in

case of ground pin disconnection.

TYPE

RDS(on)

IOUT

VCC

VNQ810M

150 m

Ω (*)

0.6 A (*)

36 V

SO-28 (DOUBLE ISLAND)

ORDER CODES

PACKAGE

TUBE

T&R

SO-28

VNQ810M

VNQ810M13TR

(*) Per each channel

ABSOLUTE MAXIMUM RATING

(**) See application schematic at page 9

Symbol

Parameter

Value

Unit

VCC

DC Supply Voltage

41

V

- VCC

Reverse DC Supply Voltage

-0.3

V

- Ignd

DC Reverse Ground Pin Current

-200

mA

IOUT

DC Output Current

Internally Limited

A

- IOUT

Reverse DC Output Current

-6

A

IIN

DC Input Current

+/- 10

mA

ISTAT

DC Status Current

+/- 10

mA

VESD

Electrostatic Discharge (Human Body Model: R=1.5K

Ω; C=100pF)

- INPUT

- STATUS

- OUTPUT

- VCC

4000

5000

V

EMAX

Maximum Switching Energy

(L=310mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=0.9A)

174

mJ

Ptot

Power dissipation (per island) at Tlead=25°C

6.25

W

Tj

Junction Operating Temperature

Internally Limited

°C

Tstg

Storage Temperature

-55 to 150

°C

Rev. 1

类似零件编号 - VNQ810M

制造商	部件名	数据表	功能描述
STMicroelectronics	VNQ810M-E	216Kb / 21P	QUAD CHANNEL HIGH SIDE DRIVER Oct-2004

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VNQ810M 数据表(PDF) 1 Page - STMicroelectronics

VNQ810M 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - VNQ810M

类似说明 - VNQ810M

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链接网址

VNQ810M 数据表(PDF) 1 Page - STMicroelectronics

VNQ810M 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - VNQ810M

类似说明 - VNQ810M

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