WS57C256F-35 datasheet(4/5 Pages) STMICROELECTRONICS

4 / 5 page

SYMBOLS

PARAMETER

MIN

TYP

MAX

UNITS

tAS

Address Setup Time

µs

tCOH

CE High to OE High

µs

tOES

Output Enable Setup Time

µs

tOS

Data Setup Time

µs

tAH

Address Hold Time

µs

tOH

Data Hold Time

µs

tDF

Chip Disable to Output Float Delay

130

tOE

Data Valid From Output Enable

130

tVS/tCES

VPP Setup Time/CE Setup Time

µs

tPW

PGM Pulse Width

100

200

µs

tOCX

OE Low to CE "Don't Care"

µs

WS57C256F

3-16

PROGRAMMING INFORMATION

DC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

SYMBOLS

PARAMETER

MIN

MAX

UNITS

ILI

Input Leakage Current

–10

µA

(VIN = VCC or Gnd)

IPP

VPP Supply Current During

Programming Pulse (CE/ PGM = VIL)

ICC

VCC Supply Current (Note 8)

VOL

Output Low Voltage During Verify

0.4

(IOL = 16 mA)

VOH

Output High Voltage During Verify

2.4

(IOH = –4 mA)

AC CHARACTERISTICS (T

A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)

PROGRAMMING WAVEFORM

ADDRESS STABLE

ADDRESSES

VPP

VCC

CE/PGM

DATA

tAS

tPW

tOS

tOH

tOE

tAH

tDF

tVS

tCES

tOES

tOCX

tCOH

DATA OUT

DATA IN STABLE

VIH

VIL

VIH

VIL

VALID

HIGH Z

NOTE:

8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.

9. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to

12.5 volts or vice-versa.

10. During power up the PGM pin must be brought high (

≥ V

IH) either coincident with or before power is applied to VPP.

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