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Fig. 6: Relative variation of dV/dt immunity

versus gate-cathode resistance (typical values).

Fig. 7: Relative variation of dV/dt immunity

versus

gate-cathode

capacitance

(typical

values).

Fig. 8: Surge peak on-state current versus

number of cycles.

Fig. 9:

Non-repetitive surge

peak on-state

current

for

a

sinusoidal

pulse

with

width

tp < 10 ms, and corresponding value of I²t.

Fig. 10:

On-state

characteristics (maximum

values).

dV/dt[Rgk]/dV/dt[Rgk=1k ]

Ω

1E-2

1E+2

1E+1

1E+0

1E-1

1E-2

1E-1

1E+0

1E+1

Rgk(k )

Ω

dV/dt[Cgk]/dV/dt[Rgk=1k ]

Ω

Cgk(nF)

20

10

5

2

1

12

5

10

amb=25°C

1

10

100

1000

0

1

2

3

4

5

6

7

8

9

10

ITSM(A)

Nonrepetitive

Tjinitial=25°C

Repetitive

T

Number of cycles

Onecycle

tp=10ms

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

Tj initial = 25 °C

ITSM

tp(ms)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

1E-2

1E-1

1E+0

1E+1

ITM(A)

Tj max.:

Vto = 0.85V

Rd = 245m

Ω

Tj = Tjmax.

Tj = 25°C

VTM(V)