STP12NM50FP datasheet(2/14 Pages) STMICROELECTRONICS

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STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤12A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On /Off

Symbol

Parameter

Value

Unit

STB12NM50

STP12NM50

STP12NM50FP

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

12 (*)

Drain Current (continuous) at TC = 100°C

7.5

7.5 (*)

IDM ( )

Drain Current (pulsed)

48 (*)

PTOT

Total Dissipation at TC = 25°C

160

Derating Factor

1.28

0.28

W/°C

VISO

Insulation Winthstand Voltage (DC)

2500

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

TO-220/ D²PAK /

I²PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.78

3.57

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source Breakdown

Voltage

ID = 250 µA, VGS = 0

500

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30 V

± 100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 50 µA

RDS(on

Static Drain-source On

Resistance

VGS = 10 V, ID = 6 A

0.30

0.35

Ω

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