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OT391 数据表(PDF) 1 Page - Suntac Electronic Corp.

部件名 OT391
功能描述  SENSITIVE GATE SILICON CONTROLLED RECTIFIER
PDF  4 Pages
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制造商  SUNTAC [Suntac Electronic Corp.]
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标志 SUNTAC - Suntac Electronic Corp.

OT391 数据表(HTML) 1 Page - Suntac Electronic Corp.

  OT391 Datasheet HTML 1Page - Suntac Electronic Corp. OT391 Datasheet HTML 2Page - Suntac Electronic Corp. OT391 Datasheet HTML 3Page - Suntac Electronic Corp. OT391 Datasheet HTML 4Page - Suntac Electronic Corp.  
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© Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 0
1
Publication Order Number:
NCR169D/D
NCR169D
Advance Information
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-92 package.
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
On–State Current Rating of 0.8 Amperes RMS at 80°C
Surge Current Capability – 10 Amperes
Immunity to dV/dt – 20 V/µsec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Blocking Voltage to 600 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (Note 1.)
(TJ = *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
VDRM,
VRRM
600
Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
ITSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I2t
0.415
A2s
Forward Peak Gate Power
(TA = 25°C, Pulse Width v 1.0
µs)
PGM
0.1
Watt
Forward Average Gate Power
(TA = 25°C, t = 20 ms)
PG(AV)
0.
10
Watt
Forward Peak Gate Current
(TA = 25°C, Pulse Width v 1.0
µs)
IGM
1.
0
Amp
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width v 1.0
µs)
VGRM
5.0
Volts
Operating Junction Temperature Range
@ Rate VRRM and VDRM
TJ
–40 to
110
°C
Storage Temperature Range
Tstg
–40 to
150
°C
SCR
0.8 AMPERES RMS
600 VOLTS
4
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
A
STC OT391
TO−92 (TO−226)
CASE 029
STYLE 10
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A


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