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RH07

TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) (Note 5)

TA = 25°C

SUB-

SYMBOL PARAMETER

CONDITIONS

NOTES

MIN

TYP

MAX

GROUP

MIN

TYP

MAX

GROUP

UNITS

VOS

Input Offset Voltage

200

2,3

µV

∆VOS

Avg Input Offset Voltage Drift:

∆Temp

Without External Trim

1.3

µV/°C

With External Trim

Null Pot = 20k

Ω

1.3

µV/°C

∆V

Long-Term Input Offset

2,3

µV/Mo

∆Time

Voltage Stability

IOS

Input Offset Current

2.8

5.6

2,3

∆I

Avg Input Bias Current Drift

pA/

°C

∆Temp

Input Bias Current

± 31

± 6

2,3

∆IB

Avg Input Bias Current Drift

pA/

°C

∆Temp

Input Noise Voltage

0.1Hz to 10Hz

0.6

µVP-P

Input Noise Voltage Density

fO = 10Hz

nV/

√Hz

fO = 100Hz

nV/

√Hz

fO = 1000Hz

nV/

√Hz

Input Noise Current

0.1Hz to 10Hz

pAP-P

Input Noise Current Density

fO = 10Hz

0.80

pA/

√Hz

fO = 100Hz

0.23

pA/

√Hz

fO = 1000Hz

0.17

pA/

√Hz

RIN

Input Resistance:

Differential Mode

Ω

Common Mode

200

Ω

Input Voltage Range

±13.5

CMRR

Common-Mode

VCM = ±13V

110

106

2,3

Rejection Ratio

PSRR

Power Supply Rejection Ratio VS = ±3V to ±18V

100

2,3

AVOL

Large-Signal Voltage Gain

RL ≥ 2k, VO = ±10V

200

150

5,6

V/mV

RL ≥ 500Ω, VO = ±0.5V

150

V/mV

VS = ±3V

VOUT

Maximum Output

RL ≥ 10k

±12.5

Voltage Swing

RL ≥ 2k

±12.0

5,6

RL ≥ 1k

±10.5

Slew Rate

RL ≥ 2k

0.1

µs

GBW

Closed-Loop Bandwidth

AVCL = 1

0.4

MHz

Power Dissipation

VS = ±15V

120

VS = ±3V

–55

°C ≤ TA ≤ 125°C

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