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SDB2000G 数据表(PDF) 2 Page - Suntac Electronic Corp.

部件名 SDB2000G
功能描述  silicon bilateral voltage triggered switch
PDF  6 Pages
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制造商  SUNTAC [Suntac Electronic Corp.]
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标志 SUNTAC - Suntac Electronic Corp.

SDB2000G 数据表(HTML) 2 Page - Suntac Electronic Corp.

  SDB2000G Datasheet HTML 1Page - Suntac Electronic Corp. SDB2000G Datasheet HTML 2Page - Suntac Electronic Corp. SDB2000G Datasheet HTML 3Page - Suntac Electronic Corp. SDB2000G Datasheet HTML 4Page - Suntac Electronic Corp. SDB2000G Datasheet HTML 5Page - Suntac Electronic Corp. SDB2000G Datasheet HTML 6Page - Suntac Electronic Corp.  
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Sidac
Data Sheets
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM;
TJ
100 °C
IBO — Breakover current 50/60 Hz sine wave
IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM
IH — Dynamic holding current 50/60 Hz sine wave; R = 100
IT(RMS) — On-state RMS current TJ 125 °C 50/60 Hz sine wave
ITSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
RS — Switching resistance
50/60 Hz sine wave
VBO — Breakover voltage 50/60 Hz sine wave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage; IT = 1 A
General Notes
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Storage temperature range (TS) is -65 °C to +150 °C.
The case (TC) or lead (TL) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (TJ) is -40 °C to +125 °C.
Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; 1/16" (1.59 mm) from case.
Electrical Specification Notes
(1)
See 4 for VBO change versus junction temperature.
(2)
See 4 for IBO versus junction temperature.
(3)
See 3 for IH versus case temperature.
(4)
See 5 for test circuit.
(5)
See 3 for more than one full cycle rating.
(6)
TC
90 °C for TO-92 Sidac
TC
105 °C for TO-202 Sidacs
TL
100 °C for DO-15X
TL
90 °C for DO-214
(7)
See 5 for clarification of sidac operation.
(8)
For best sidac operation, the load impedance should be near or
less than switching resistance.
(9)
See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
V-I Characteristics
Type
Part No.
IT(RMS)
VDRM
VBO
IDRM
IBO
IH
TO-92
DO-15X
(10)
TO-202
DO-214
(6) (7) (8)
Amps
Volts
(1)
Volts
µAmps
(2)
µAmps
(3) (4)
mAmps
See “Package Dimensions” section for variations. (9)
MAX
MIN
MIN
MAX
MAX
MAX
TYP
MAX
1
±70
79
97
5
10
60
150
1
±90
95
113
5
10
60
150
1
±90
104
118
5
10
60
150
1
±90
110
125
5
10
60
150
1
±90
120
138
5
10
60
150
1
±90
130
146
5
10
60
150
1
±90
140
170
5
10
60
150
1
±180
190
215
5
10
60
150
1
±180
205
230
5
10
60
150
1
±190
220
250
5
10
60
150
1
±200
240
280
5
10
60
150
1
±200
270
330
5
10
60
150
Pin 1
Pin 2
Do not use
Pin 3
Do
not
use
tab
R
S
V
BO
V
S
I
S
I
BO
--------------------------------
=
-V
+I
VDRM
+V
VS
IS
IH
RS
IDRM
IBO
VBO
VT
IT
(IS - IBO)
(VBO - VS)
RS =
-I
SDB0900E70
SDB1050E70
SDB1100E70
SDB1200E70
SDB1300E70
SDB1400E70
SDB1500E70
SDB2000E70
SDB2200E70
SDB2400E70
SDB2500E70
SDB2000F1
SDB2200F1
SDB2400F1
SDB2500F1
SDB3000F1
SDB2500G
SDB2400G
SDB2200G
SDB2000G
SDB1500G
SDB1400G
SDB1300G
SDB1200G
SDB1100G
SDB1050G
SDB0900G
SDB2500S
SDB2400S
SDB2200S
SDB2000S
SDB1500S
SDB1400S
SDB1300S
SDB1200S
SDB1100S
SDB1050S
SDB0900S



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