DN3545 datasheet(2/4 Pages) SUTEX

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90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

gen

-10V

Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ T

A = 25°C

°C/W

TO-92

136mA

1.6A

0.74W

125

170

136mA

1.6A

TO-243AA

200mA

300mA

1.6†

78†

200mA

300mA

* I

D (continuous) is limited by max rated Tj.

† Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P

D increase possible on ceramic substrate.

Thermal Characteristics

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSX

Drain-to-Source

450

VGS = -5V, ID = 100µA

Breakdown Voltage

VGS(OFF)

Gate-to-Source OFF Voltage

–1.5

–3.5

VDS = 25V, ID= 10µA

∆VGS(OFF)

Change in V

GS(OFF) with Temperature

4.5

mV/°CVDS = 25V, ID= 10µA

IGSS

Gate Body Leakage Current

100

VGS = ± 20V, VDS = 0V

ID(OFF)

Drain-to-Source Leakage Current

1.0

µAVGS = -5V, VDS = Max Rating

1.0

GS = -5V, VDS = 0.8 Max Rating

TA = 125°C

DSS

Saturated Drain-to-Source Current

200

GS = 0V, VDS = 15V

RDS(ON)

Static Drain-to-Source

Ω

VGS = 0V, ID = 150mA

ON-State Resistance

∆RDS(ON)

Change in RDS(ON) with Temperature

1.1

%/°CVGS = 0V, ID = 150mA

GFS

Forward Transconductance

150

ID = 100mA, VDS = 10V

ISS

Input Capacitance

360

GS = -5V, VDS = 25V

COSS

Common Source Output Capacitance

f = 1 MHz

RSS

Reverse Transfer Capacitance

d(ON)

Turn-ON Delay Time

DD = 25V,

Rise Time

ID = 150mA,

d(OFF)

Turn-OFF Delay Time

GEN = 25Ω,

Fall Time

GS = 0V to -10V

VSD

Diode Forward Voltage Drop

1.8

VGS = -5V, ISD = 150mA

Reverse Recovery Time

800

GS = -5V, ISD = 150mA

Notes:

All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

DN3545

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