2

TN2425

Thermal Characteristics

Package

I

I

Power Dissipation

I

TO-243AA

480mA

1.9A

15

480mA

1.9A

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

Drain-to-Source Breakdown Voltage

250

V

V

GS(th)

Gate Threshold Voltage

0.8

V

V

-5.5

I

GSS

Gate Body Leakage

100

nA

V

Zero Gate Voltage Drain Current

10

1.0

mA

V

I

D(ON)

ON-State Drain Current

0.8

A

V

1.5

R

DS(ON)

Static Drain-to-Source ON-State

6.0

V

Resistance

5.0

Ω

3.5

Change in R

1.7

Forward Transconductance

500

m

C

ISS

Input Capacitance

105

200

V

Common Source Output Capacitance

25

100

pF

f = 1.0MHz

C

RSS

Reverse Transfer Capacitance

7

40

Turn-ON Delay Time

5

15

t

r

Rise Time

10

25

ns

t

d(OFF)

Turn-OFF Delay Time

25

35

Fall Time

5

15

V

SD

Diode Forward Voltage Drop

1.5

V

V

Reverse Recovery Time

300

ns

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

V

R