TN2501 datasheet(2/4 Pages) SUTEX

2 / 4 page

Thermal Characteristics

Package

D (continuous)*

D (pulsed)

Power Dissipation

θjc

θja

DR*IDRM

@ TA = 25°C

°C/W

TO-243AA

400mA

560mA

1.6W†

78†

560mA

750mA

* I

D (continuous) is limited by max rated Tj.

† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

D increase possible on ceramic substrate.

90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

10V

gen

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

DSS

Drain-to-Source Breakdown Voltage

GS = 0V, ID = 1.0mA

VGS(th)

Gate Threshold Voltage

0.3

1.0

VGS = VDS, ID= 1.0mA

∆VGS(th)

Change in VGS(th) with Temperature

-4.0

mV/°CVGS = VDS, ID= 1.0mA

GSS

Gate Body Leakage

100

GS = ± 15V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

µAVGS = 0V, VDS = Max Rating

1.0

VGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

ID(ON)

ON-State Drain Current

250

600

VGS = VDS = 3.0V

DS(ON)

GS = 1.2V, ID = 3.0mA

3.5

Ω

VGS = 2.0V, ID = 50mA

2.5

VGS = 3.0V, ID = 200mA

∆RDS(ON)

Change in R

DS(ON) with Temperature

0.75

%/°CVGS = 3.0V, ID = 200mA

GFS

Forward Transconductance

0.15

0.3

VDS = 3.0V, ID = 200mA

ISS

Input Capacitance

110

OSS

Common Source Output Capacitance

CRSS

Reverse Transfer Capacitance

d(ON)

Turn-ON Delay Time

5.0

Rise Time

td(OFF)

Turn-OFF Delay Time

Fall Time

8.0

Diode Forward Voltage Drop

1.1

1.8

GS = 0V, ISD = 200mA

trr

Reverse Recovery Time

100

VGS = 0V, ISD = 200mA

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µsec pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

Static Drain-to-Source

ON-State Resistance

VDD = 15V,

D = 250mA,

GEN = 25Ω

GS = 0V, VDS = 15V

f = 1 MHz

TN2501

TN2501 数据表(PDF) 2 Page - Supertex, Inc

TN2501 数据表(HTML) 2 Page - Supertex, Inc

Html Pages

1 2 3 4

数据表下载