TN2510ND datasheet(2/4 Pages) SUTEX

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90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

10V

gen

Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ T

A = 25°C

°C/W

TO-243AA

0.73A

5.0A

1.6W†

78†

0.73A

5.0A

* I

D (continuous) is limited by max rated Tj.

† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

D increase possible on ceramic substrate.

Thermal Characteristics

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSS

100

VGS = 0V, ID = 2mA

GS(th)

Gate Threshold Voltage

0.6

2.0

GS = VDS, ID= 1mA

∆VGS(th)

Change in VGS(th) with Temperature

-4.5

mV/°CVGS = VDS, ID= 1.0mA

IGSS

Gate Body Leakage

100

VGS = ± 20V, VDS = 0V

DSS

Zero Gate Voltage Drain Current

µAVGS = 0V, VDS = Max Rating

1.0

VGS = 0V, VDS = 0.8 Max Rating

A = 125°C

ID(ON)

ON-State Drain Current

1.2

2.0

VGS = 5.0V, VDS = 25V

3.0

6.0

VGS = 10V, VDS = 25V

DS(ON)

GS = 3.0V, ID = 250mA

1.5

2.0

Ω

VGS = 4.5V, ID = 750mA

1.0

1.5

VGS = 10V, ID = 750mA

∆RDS(ON)

Change in R

DS(ON) with Temperature

0.75

%/°CVGS = 10V, ID = 750mA

GFS

Forward Transconductance

0.4

0.8

VDS = 25V, ID = 1.0A

ISS

Input Capacitance

125

OSS

Common Source Output Capacitance

CRSS

Reverse Transfer Capacitance

d(ON)

Turn-ON Delay Time

Rise Time

td(OFF)

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage Drop

1.8

GS = 0V, ISD = 1.5A

trr

Reverse Recovery Time

300

VGS = 0V, ISD = 1.5A

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

DD = 25V,

ID = 1.5A,

GEN = 25Ω

GS = 0V, VDS = 25V

f = 1 MHz

TN2510

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