TN2524N8 datasheet(2/4 Pages) SUTEX

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TN2524

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSS

240

GS = 0V, ID = 2mA

VGS(th)

Gate Threshold Voltage

0.6

2.0

VGS = VDS, ID= 1mA

∆VGS(th)

Change in VGS(th) with Temperature

-5.0

mV/°CVGS = VDS, ID= 1mA

GSS

Gate Body Leakage

100

GS = ± 20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

µAVGS = 0V, VDS = Max Rating

1.0

VGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

ID(ON)

ON-State Drain Current

0.5

1.9

VGS = 4.5V, VDS = 25V

1.0

2.8

GS = 10V, VDS = 25V

RDS(ON)

4.0

6.0

VGS = 4.5V, ID = 250mA

4.0

6.0

VGS = 10V, ID = 0.5A

∆RDS(ON)

Change in R

DS(ON) with Temperature

1.4

%/°CVGS = 10V, ID = 0.5A

GFS

Forward Transconductance

300

600

VDS = 25V, ID = 0.5A

ISS

Input Capacitance

125

OSS

Common Source Output Capacitance

CRSS

Reverse Transfer Capacitance

d(ON)

Turn-ON Delay Time

Rise Time

td(OFF)

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage Drop

1.8

GS = 0V, ISD = 1.0A

trr

Reverse Recovery Time

300

VGS = 0V, ISD = 1.0A

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Thermal Characteristics

Package

D (continuous)*

D (pulsed)

Power Dissipation

θjc

θja

DR*IDRM

@ TA = 25°C

°C/W

TO-243AA

0.36A

2.0A

1.6W†

78†

0.36A

2.0A

* I

D (continuous) is limited by max rated Tj.

† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

D increase possible on ceramic substrate.

Electrical Characteristics (@ 25°C unless otherwise specified)

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

VGS = 0V, VDS = 25V

f = 1 MHz

90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

10V

gen

Switching Waveforms and Test Circuit

DD = 25V,

D = 1.0A,

RGEN = 25Ω

Ω

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