2

TN2540

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

400

V

V

Gate Threshold Voltage

0.6

2.0

V

Change in V

-2.5

-4.0

Gate Body Leakage

100

nA

Zero Gate Voltage Drain Current

10

1.0

mA

V

I

D(ON)

ON-State Drain Current

0.3

0.5

V

0.75

1.0

8.0

12

8.0

12

V

0.75

G

FS

Forward Transconductance

125

200

m

V

C

ISS

Input Capacitance

95

125

Common Source Output Capacitance

20

70

pF

C

RSS

Reverse Transfer Capacitance

10

25

t

d(ON)

Turn-ON Delay Time

20

Rise Time

15

t

d(OFF)

Turn-OFF Delay Time

25

t

f

Fall Time

20

Diode Forward Voltage Drop

1.8

V

t

rr

Reverse Recovery Time

300

ns

V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Thermal Characteristics

Switching Waveforms and Test Circuit

Drain-to-Source

Breakdown Voltage

V

f = 1 MHz

I

ns

Static Drain-to-Source

ON-State Resistance

Package

I

I

Power Dissipation

I

TO-92

175mA

2.0A

1.0W

125

170

175mA

2.0A

TO-243AA

260mA

1.8A

15

260mA

1.8A

Ω