TP2104K1 datasheet(2/4 Pages) SUTEX

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TP2104

90%

10%

90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

(ON)

d(ON)

(OFF)

d(OFF)

INPUT

OUTPUT

gen

-10V

Switching Waveforms and Test Circuit

Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ T

A = 25°C

°C/W

SOT-23

-0.16A

-0.8A

0.36W

200

350

-0.16A

-0.8A

TO-92

-0.25A

-1.0A

0.74W

125

170

-0.25A

-1.0A

* I

D (continuous) is limited by max rated Tj.

Thermal Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-40

VGS = 0V, ID = -1.0mA

VGS(th)

Gate Threshold Voltage

-1.0

-2.0

VGS = VDS, ID = -1.0mA

∆VGS(th)

Change in V

GS(th) with Temperature

5.8

6.5

mV/°CVGS = VDS, ID = -1.0mA

IGSS

Gate Body Leakage

-1.0

-100

VGS = ±20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

-10

µAVGS = 0V, VDS = Max Rating

-1

GS = 0V, VDS = 0.8 Max Rating

TA = 125°C

D(ON)

ON-State Drain Current

-0.6

GS = -10V, VDS = -25V

RDS(ON)

10.0

Ω

VGS = -4.5V, ID = -50mA

6.0

Ω

VGS = -10V, ID = -0.5A

∆RDS(ON)

Change in R

DS(ON) with Temperature

0.55

1.0

%/°CVGS = -10V, ID = -0.5A

GFS

Forward Transconductance

150

200

VDS = -25V, ID = -0.5A

CISS

Input Capacitance

OSS

Common Source Output Capacitance

CRSS

Reverse Transfer Capacitance

d(ON)

Turn-ON Delay Time

Rise Time

td(OFF)

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage Drop

-1.2

-2.0

GS = 0V, ISD = -0.5A

trr

Reverse Recovery Time

400

VGS = 0V, ISD = -0.5A

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

Static Drain-to-Source

ON-State Resistance

VGS = 0V, VDS = -25V

f = 1 MHz

VDD = -25V

D = -0.5A

RGEN = 25Ω

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