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TP2520 数据表(PDF) 2 Page - Supertex, Inc

部件名 TP2520
功能描述  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
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制造商  SUTEX [Supertex, Inc]
网页  http://www.supertex.com
标志 SUTEX - Supertex, Inc

TP2520 数据表(HTML) 2 Page - Supertex, Inc

  TP2520 Datasheet HTML 1Page - Supertex, Inc TP2520 Datasheet HTML 2Page - Supertex, Inc TP2520 Datasheet HTML 3Page - Supertex, Inc TP2520 Datasheet HTML 4Page - Supertex, Inc  
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TP2520/TP2522
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ TA = 25°C
°C/W
°C/W
TO-243AA
-260mA
-2.0A
1.6W
15
78†
-260mA
-2.0A
* I
D (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
TP2522
-220
VVGS = 0V, ID = -2mA
TP2520
-200
VGS(th)
Gate Threshold Voltage
-1.0
-2.4
V
VGS = VDS, ID= -1mA
∆VGS(th)
Change in VGS(th) with Temperature
4.5
mV/°CVGS = VDS, ID= -1mA
I
GSS
Gate Body Leakage
-100
nA
V
GS = ± 20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
µAVGS = 0V, VDS = Max Rating
-1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
-0.25
-0.7
VGS = -4.5V, VDS = -25V
-0.75
-2.1
V
GS = -10V, VDS = -25V
RDS(ON)
10
15
Ω
VGS = -4.5V, ID = -100mA
8.0
12
VGS = -10V, ID = -200mA
∆RDS(ON)
Change in R
DS(ON) with Temperature
1.7
%/°CVGS = -10V, ID = -200mA
GFS
Forward Transconductance
100
250
m
VDS = -25V, ID = -200mA
C
ISS
Input Capacitance
75
125
C
OSS
Common Source Output Capacitance
20
85
pF
CRSS
Reverse Transfer Capacitance
10
35
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
td(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
15
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS = 0V, ISD = -0.5A
trr
Reverse Recovery Time
300
ns
VGS = 0V, ISD = -0.5A
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
A
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VGS = 0V, VDS = -25V
f = 1 MHz
ns
VDD = -25V,
ID = -0.75A,
RGEN = 25Ω



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