EF Series

•

High Thermal Efficiency

•

Complete Power Control

Circuits In a Single Package

AVAILABLE OPTIONS

ELECTRICAL SPECIFICATIONS

Description

Symbol

D

E

F

G

Maximum DC Output Current (Tc = 85°C) (Single Phase Rating)

50 A

75 A

100 A

125 A

Maximum Voltage Drop @ Amps Peak

1.7V @ 50A

1.85V @ 75A

1.4V @ 100A

1.55V @ 125A

Operating Junction Temperature Range

-40 - 125°C

-40 - 125°C

-40 - 125°C

-40 - 125°C

Critical Rate of Rise of On-State Current @ TJ=125°C

di/dt

100A/µs

100A/µs

100A/µs

100A/µs

Critical Rate of Rise of Off-State Voltage [V/µs]

dv/dt

500V/µs

500V/µs

500V/µs

500V/µs

400 (120 VAC)

600 (240 VAC)

Repetitive Peak Reverse Voltage (AC Line Nominal) [Vpk]

800 (280 VAC)

1200 (480 VAC)

1400 (530 VAC)

Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz) [A]

400

600

1500

1950

Maximum I²T for Fusing (t=8.3ms) [A²sec]

670

1500

9340

15800

Minimum Required Gate Current to Trigger @ 25°C [mA]

60

80

150

150

Minimum Required Gate Voltage to Trigger @ 25°C [V]

2.5

3.0

3.0

3.0

Average Gate Power [W]

0.5

0.5

0.5

0.5

Maximum Peak Reverse Gate Voltage [V]

5.0

5.0

5.0

5.0

Maximum Thermal Resistance, Junction to Ceramic Base per Chip

0.8°C/W

0.7°C/W

0.36°C/W

0.3°C/W

Isolation Voltage [Vrms]

2500

2500

2500

2500