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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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2PB710AS 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2PB710AS 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0; VCB = -60 V -10 nA IE =0; VCB =-60 V; Tj = 150 -5 ìA Emitter cut-off current IEBO IC =0; VEB =-5V -10 nA DC current gain 2PB710AQ 85 170 2PB710AR 120 240 2PB710AS 170 340 DC current gain IC = -500 mA; VCE =-10 V; * 40 Collector-emitter saturation voltage VCEsat IC = -300 mA; IB = -30 mA * -600 mV Base-emitter saturation voltage VBEsat IC = -300 mA; IB = -30 mA * -1.5 V Collector capacitance Cc IE =ie =0; VCB = -10 V; f = 1 MHz 15 pF Transition frequency 2PB710AQ 100 2PB710AR 120 2PB710AS 140 *. Pulse test: tp 300 ìs; ä 0.02. ICBO Collector cut-off current hFE IC = -150 mA; VCE =-10 V* fT IC =-50 mA; VCE = -10 V; f = 100 MHz* MHz 2PB710A Marking Type Number 2PB710AQ 2PB710AR 2PB710AS Marking DQ DR DS |
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