2SC2859 datasheet(1/1 Pages) KEXIN

部件名	2SC2859

功能描述	Silicon NPN Epitaxial

PDF	1 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 1 page

SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Silicon NPN Epitaxial

2SC2859

Features

Excellent hFE linearity : hFE (2) = 25 (min) (VCE =6V, IC =400 mA).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

35

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

5V

Collector current

IC

500

mA

Base current

IB

50

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

Storage temperature range

Tstg

-55to+125

hFE Classification

Marking

WO

WY

WG

hFE

70

140

120

240

200

400

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =35V, IE =0

0.1

ìA

Emitter cut-off current

IEBO

VEB =5V, IC =0

0.1

ìA

hFE1VCE =1V , IC = 100mA

70

400

hFE2*

VCE =6V , IC = 400mA

25

Collector-emitter saturation voltage

VCE (sat) IC = 100 mA, IB = 10 mA

0.1

0.25

V

Base-emitter voltage

VBE

VCE =1V, IC = 100 mA

0.8

1.0

V

Transition frequency

fT

VCE =6V, IC = 20 mA

300

MHz

Collector output capacitance

Cob

VCB =6V, IE = 0 ,f= 1 MHz

7

pF

*hFE 2 classification O: 25 min, Y: 40 min, GR: 70 min

DC current gain

类似零件编号 - 2SC2859

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Toshiba Semiconductor	2SC2859	142Kb / 2P	TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
Galaxy Semi-Conductor H...	2SC2859	161Kb / 3P	Silicon Epitaxial Planar Transistor Rev.A
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Shenzhen Jin Yu Semicon...	2SC2859	458Kb / 1P	TRANSISTOR (NPN)
Toshiba Semiconductor	2SC2859	141Kb / 3P	Audio Frequency Low Power Amplifier Applications

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