2SD1949 datasheet(1/1 Pages) KEXIN

部件名	2SD1949

功能描述	Medium Power Transistor

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 1 page

SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

1 Emitter

2 Base

3 Collector

Medium Power Transistor

2SD1949

Features

High current.(IC=5A)

Low saturation voltage, typically VCE(sat)=0.1V at IC /IB=150mA / 15mA.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5V

Collector current

IC

0.5

A

Collector power dissipation

PC

0.2

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

BVCBO

IC=1mA

50

V

Collector-emitter breakdown voltage

BVCEO

VCB=30V

50

V

Emitter-base breakdown voltage

BVEBO

VEB=4V

5

V

Collector cutoff current

ICBO

VCE/IC=3V/0.01A

0.5

ìA

Emitter cutoff current

IEBO

VCE=5V , IE= -20mA , f=100MHz

0.5

ìA

DC current transfer ratio

hFE

VCB=10V , IE=0A , f=1MHz

120

390

Collector-emitter saturation voltage

VCE(sat) IC=100ìA

0.4

V

Output capacitance

fT

IE=100ìA

250

MHz

Transition frequency

Cob

IC/IB=150mA/15mA

6.5

pF

hFE Classification

Marking

Rank

Q

R

hFE

120

270

180

390

Y

类似零件编号 - 2SD1949

制造商	部件名	数据表	功能描述
Rohm	2SD1949	42Kb / 3P	Medium Power Transistor (50V, 0.5A)
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	2SD1949	67Kb / 3P	Medium Power Transistor (50V,0.5A)

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