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HVC135 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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HVC135 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type www.kexin.com.cn 1 Diodes SOD-523 Unit: mm 0.77max 0.6+0.1 -0.1 1.2+0.1 -0.1 1.6+0.1 -0.1 +- Silicon Epitaxial Trench Pin Diode HVC135 Features Adopting the trench structure improves low capacitance.(C=0.6pF max) Low forward resistance. (rf=2.0 max) Low operation current. A b solu te M a xim u m R atings T a = 2 5 P a ra m e te r S y m bol V a lu e U nit P eak re v e rs e v oltage V RM 65 V R e v e rs e v oltage V R 60 V F o rw ard c urrent IF 100 m A P o w e r d issipatio n P d 150 m W Junction te m perature T j 125 S torage te m perature T stg -5 5 to + 125 Electrical Characteristics Ta = 25 Param eter Sym bol Conditions Min Typ Max Unit Reverse current IR VR =60V 0.1 A Reverse voltage VF IF =2m A 0.9 V Capacitance C VR = 1 V,f= 1 MHz 0.6 pF Forward resistance rf IF = 2 m A, f = 100 MHz 2.0 Note 1. Failure criterion ; IR > 100 nA at VR =60V. V ESD-Capability *1 C =200pF, Both forward and reversedirection1pulse 100 Marking Marking P5 |
类似零件编号 - HVC135 |
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类似说明 - HVC135 |
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