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2SC2713 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC2713 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page ![]() SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon NPN Epitaxial Type 2SC2713 Features High voltage VCEO=120V High hFE Low noise. Small package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 120 V, IE =0 0.1 ìA Emitter cut-off current IEBO VEB =5V, IC =0 0.1 ìA DC current gain hFE VCE =6V, IC = 2 mA 200 700 Collector-emitter saturation voltage VCE (sat) IC =10mA, IB =1mA 0.3 V Transition frequency fT VCE =6V, IC = 1 mA 100 MHz Collector output capacitance Cob VCB =10V, IE = 0,f= 1 MHz 3 pF Noise figure NF VCB=6 V, IC=0.1 mA, f=1 kHz,Rg=10 kÙ 1.0 10 dB hFE Classification Marking DG DL Rank GR BL hFE 200 400 350 700 |
类似零件编号 - 2SC2713 |
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类似说明 - 2SC2713 |
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