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FMMT596 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FMMT596 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn FMMT596 Marking Marking 596 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -220 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -200 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-200V -100 nA Collector-Emitter Cut-Off Current ICES VCE=-200V -100 nA Emitter cut-off current IEBO VEB=-4V -100 nA IC=-100mA, IB=-10mA -0.2 V IC=-250mA, IB=-25mA -0.35 V Base-emitter saturation voltage * VBE(sat) IC=-250mA, IB=-25mA -1.0 V Base-emitter voltage * VBE(ON) IC=-250mA,VCE=-10V -0.9 V IC=-1mA, VCE=-10V 100 IC=-100mA,VCE=-10V* 100 IC=-250mA,VCE=-10V* 85 300 IC=-400mA,VCE=-10V* 35 Current-gain-bandwidth product fT IC=-50mA,VCE=-10V,f=100MHz 150 MHz Output capacitance Cobo VCB=-10V,f=1MHz 10 pF * Pulse test: tp = 300 ìs; d 0.02. Collector-emitter saturation voltage * VCE(sat) hFE Static Forward Current Transfer Ratio |
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