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FCX458 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FCX458 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 400 V Breakdown Voltages VCEO(sus) IC=10mA* 400 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V Collector Cut-Off Currents ICBO VCB=320V 100 nA Collector Cut-Off Currents ICES VCE=320V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA IC=20mA, IB=2mA* 0.2 V IC=50mA, IB=6mA* 0.5 V VBE(sat) IC=50mA, IB=5mA* 0.9 V Base-Emitter Turn On Voltage VBE(on) IC=50mA, VCE=10V* 0.9 V IC=1mA, VCE=10V 100 IC=50mA, VCE=10V* 100 300 IC=100mA, VCE=10V* 15 Transition Frequency fT IC=10mA, VCE=20V,f=20MHz 50 MHz Collector-Base Breakdown Voltage Cobo VCB=20V, f=1MHz 5 pF ton IC=50mA, VCC=100V ns toff IB1=5mA, IB2=-10mA ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% 135 Typical 2260 Typical Emitter Saturation Voltages VCE(sat) Switching times hFE Static Forward Current Transfer Ratio Marking Marking N58 FCX458 |
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