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TC43 数据表(PDF) 2 Page - TelCom Semiconductor, Inc

部件名 TC43
功能描述  LINEAR BUILDING BLOCK - VOLTAGE REFERENCE, DUAL OP AMP, DUAL COMPARATOR WITH SHUTDOWN MODE
PDF  6 Pages
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制造商  TELCOM [TelCom Semiconductor, Inc]
网页  http://www.telcom-semi.com
标志 TELCOM - TelCom Semiconductor, Inc

TC43 数据表(HTML) 2 Page - TelCom Semiconductor, Inc

  TC43 Datasheet HTML 1Page - TelCom Semiconductor, Inc TC43 Datasheet HTML 2Page - TelCom Semiconductor, Inc TC43 Datasheet HTML 3Page - TelCom Semiconductor, Inc TC43 Datasheet HTML 4Page - TelCom Semiconductor, Inc TC43 Datasheet HTML 5Page - TelCom Semiconductor, Inc TC43 Datasheet HTML 6Page - TelCom Semiconductor, Inc  
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TC43
LINEAR BUILDING BLOCK –
VOLTAGE REFERENCE, DUAL OP AMP,
DUAL COMPARATOR WITH SHUTDOWN MODE
2
PRELIMINARY INFORMATION
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage .............................................................. 6V
Package Power Dissipation (TA ≤ 70°C)
PDIP .............................................................. 840mW
SOIC (Narrow) ................................................ 700mW
Voltage on Any Pin:
(With Respect to GND) ........ (VSS – 0.3V) to (VDD +0.3V)
Operating Temperature Range:
C Suffix ................................................. 0
°C to +70°C
E Suffix ............................................ – 40
°C to + 85°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range, VDD = 5.0V ±10%, VSS = 0V,
SHDN = VDD, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VDD
Supply Voltage
1.8
5.5
V
IQ
Supply Current, Operating
All Outputs Open
10
15
µA
ISHDN
Supply Current, Shutdown Mode
All Outputs Open
5
8
µA
(Note 1)
Shutdown Input
VIH
Input High Voltage
80% VDD
——
V
VIL
Input Low Voltage
20% VDD
V
IIL
Input Current
1
µA
Op Amps
TSEL
Select Time (VOUT from SHDN = VIH)
2
msec
TDESEL
Deselect Time (HI-Z from SHDN = VIL)—
5
µsec
AVOL
Large Signal Voltage Gain
CL = 100pF, RL = 47kΩ
100
dB
VICMR
Common Mode Input Voltage Range
1.8 < VDD < 5.5V
VSS
—VDD – 1.0
V
VOS
Input Offset Voltage
VCM = (VDD – VSS)/2
–10
±1.0
+10
mV
IB
Input Bias Current
50
pA
VOS (DRIFT)
Average Input Offset Voltage Drift
30
µV/°C
GBWP
Gain-Bandwidth Product
4
7
kHz
SR
Slew Rate
Gain = 1, VIN = 4.0P-P
2
V/msec
CL = 100pF, RL = 1MΩ
to VSS
VOUT
Output Signal Swing
RL = 47kΩ
VSS + .20
VDD – .15
V
CMRR
Common Mode Rejection Ratio
80
dB
PSRR
Power Supply Rejection Ratio
(4.5V to 5.5V)
80
dB
ROUT(SD)
Output Resistance in Shutdown
SHDN = VSS
20
M
COUT(SD)
Output Capacitance in Shutdown
SHDN = VSS (Note 5)
40
55
pF
ISRC
DC Output Source Current
VIN = VDD
38
20
mA
Output Shorted to VSS
(Note 2)
ISINK
DC Output Sink Current
VIN = VSS
0.6
1.2
5
mA
Output Shorted to VDD
(Note 2)
Comparators
TSEL
CMPTR1 Select Time
5
µsec
(VOUT from SHDN = VIH)



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