2SC4413 datasheet(1/1 Pages) KEXIN

部件名	2SC4413

功能描述	NPN Epitaxial Planar Silicon Transistor

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1 / 1 page

SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

1 Emitter

2 Base

3 Collector

NPN Epitaxial Planar Silicon Transistor

2SC4413

Features

Adoption of FBET process.

High DC current gain.

Low collector-to-emitter saturation voltage.

High VEBO.

Small Cob.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

100

mA

Collector current(Pulse)

ICP

200

mA

Base current

IB

20

mA

Collector dissipation

PC

150

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 40V, IE=0

0.1

ìA

Emitter cutoff current

IEBO

VEB = 10V, IC=0

0.1

ìA

DC current gain

hFE

VCE =5V , IC = 10mA

800

1500

3200

Gain bandwidth product

fT

VCE = 10V , IC = 10mA

200

MHz

Output capacitance

Cob

VCB = 10V, f = 1MHz

1.5

pF

Collector-to-emitter saturation voltage

VCE(sat) IC = 50mA , IB =1mA

0.1

0.5

V

Base-to-emitter saturation voltage

VBE(sat) IC = 50mA , IB =1mA

0.8

1.1

V

Collector-to-base breakdown voltage

V(BR)CBO IC = 10ìA , IE =0

60

V

Collector-to-emitter breakdown voltage

V(BR)CEO IC =1mA , RBE =

50

V

Emitter-to-base breakdown voltage

V(BR)EBO IE = 10ìA , IC =0

15

V

Marking

GY

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