TC850CPL datasheet(2/14 Pages) TELCOM

2 / 14 page

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TELCOM SEMICONDUCTOR, INC.

ABSOLUTE MAXIMUM RATINGS*

Positive Supply Voltage (VDD to GND) ....................... +6V

Negative Supply Voltage (VSS to GND) .....................– 9V

Analog Input voltage (IN+ or IN–) ..................... VDD to VSS

Voltage Reference Input

(REF1+, REF1–, REF2+) .............................. VDD to VSS

Logic Input Voltage ................ VDD + 0.3V to GND – 0.3V

Current Into Any Pin ................................................. 10mA

While Operating ................................................ 100

µA

Ambient Operating Temperature Range

C Device ................................................ 0

°C to +70°C

I Device ............................................. – 25

°C to +85°C

ELECTRICAL CHARACTERISTICS: VS = ±5V, fCLK = 61.44 kHz, VFS = 3.2768V, TA = 25°C, Fig. 1 Test Circuit,

unless otherwise specified.

Symbol Parameter

Test Conditions

Min

Typ

Max

Unit

Zero-Scale Error

VIN = 0V

±0.25

±0.5

LSB

End Point Linearity Error

–VFS ≤ VIN ≤ +VFS

—

±1

±2

LSB

Differential Nonlinearity

—

±0.1

±0.5

LSB

IIN

Input Leakage Current

VIN = 0V, TA = 25°C

—

°C ≤ TA ≤ +70°C

———

– 25

° ≤ TA ≤ +85°C

—

1.1

VCMR

Common-Mode Voltage Range

Over Operating Temperature Range

VSS + 1.5

—

VDD – 1.5

CMRR

Common-Mode Rejection Ratio

VIN = 0V, VCM = ±1V

—

Full-Scale Gain Temperature

External Ref Temperature

Coefficient

Coefficient = 0 ppm/

°C

—

ppm/

°C

°C ≤ TA ≤ +70°C

Zero-Scale Error

VIN = 0V

—

0.3

µV/°C

Temperature Coefficient

°C ≤ TA ≤ +70°C

Full-Scale Magnitude

VIN = ±3.275V

—

0.5

LSB

Symmetry Error

Input Noise

Not Exceeded 95% of Time

—

µVP-P

IS+

Positive Supply Current

—

3.5

IS–

Negative Supply Current

—

3.5

VOH

Output High Voltage

IO = 500 µA

3.5

4.9

—

VOL

Output Low Voltage

IO = 1.6 mA

—

0.15

0.4

IOP

Output Leakage Current

Pins 8 – 15, High-Impedance State

—

0.1

µA

VIH

Input High Voltage

Note 3

3.5

2.3

—

Input Low Voltage

Note 3

—

2.1

IPU

Input Pull-Up Current

Pins 2, 3, 4, 6, 7; VIN = 0V

—

µA

IPD

Input Pull-Down Current

Pins 1, 5; VIN = 5V

—

µA

IOSC

Oscillator Output Current

Pin 18, VOUT = 2.5V

—

140

—

µA

CIN

Input Capacitance

Pins 1 – 7, 17

—

COUT

Output Capacitance

Pins 8 – 15, High-Impedance State

—

tCE

Chip-Enable Access Time

CS or CE, RD = LOW (Note 1)

—

230

450

nsec

tRE

Read-Enable Access Time

CS = HIGH, CE = LOW (Note 1)

—

190

450

nsec

tDHC

Data Hold From CS or CE

RD = LOW (Note 1)

—

250

450

nsec

tDHR

Data Hold From RD

CS = HIGH, CE = LOW (Note 1)

—

210

450

nsec

tOP

OVR/POL Data Access Time

CS = HIGH, CE = LOW, RD = LOW (Note 1)

—

140

300

nsec

Lead Temperature (Soldering, 10 sec) ................. +300

°C

Package Power Dissipation (TA ≤ 70°C)

CerDIP .............................................................. 2.29W

Plastic DIP ........................................................ 1.23W

Plastic PLCC .................................................... 1.23W

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operational sections of the specifications is not implied.

Exposure to Absolute Maximum Rating Conditions for extended periods

may affect device reliability.

15-BIT, FAST-INTEGRATING CMOS

ANALOG-TO-DIGITAL CONVERTER

TC850

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