SMD Type

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1

Diodes

Silicon Schottky Barrier Diode

HSB276AS

Features

High forward current, Low capacitance.

HSB276AS which is interconnected in

series configuration is designed for balanced mixer use.

CMPAK package is suitable for high density surface mounting and high speed assembly.

A b s o lu te M a x im u m R atings T a = 2 5

P a ra m e te r

S y m bol

V a lu e

U nit

R epetitiv e peak re v e rs e v oltage

5V

R e v e rs e v oltage

3V

A v erage re ctifie d c urrent

30

m A

Junction te m perature

125

S torage te m perature

-5 5to+ 1 2 5

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

3

V

Reverse current

50

A

Forward current

35

mA

Capacitance

C

0.90

pF

Capacitance deviation

ÄC

0.10

pF

C=200pF, R= 0

Both forward and

reverse direction 1 pulse.

Note

100

V

ESD-Capability (Note 1)

30

Marking

Marking

E8